ds30306 rev. 6 - 2 1 of 4 mmbz5v6al - mmbz33val www.diodes.com diodes incorporated mmbz5v6al - mmbz33val 24w and 40w peak power dual surface mount tvs dual tvs in common anode configuration 24w/40w peak power dissipation rating @ 1.0ms (unidirectional) 225 mw power dissipation ideally suited for automatic insertion low leakage features characteristic symbol value unit power dissipation (note 1) p d 225 mw peak power dissipation (note 2) mmbz5v6al - mmbz10val p pk 24 w peak power dissipation (note 2) mmbz15val - mmbz33val p pk 40 w thermal resistance, junction to ambient air (note 1) r ja 556 c/w operating and storage temperature range t j ,t stg ?65 to +150 c maximum ratings @t a = 25c unless otherwise specified case: sot-23, molded plastic case material - ul flammability rating classification 94v-0 moisture sensitivity: level 1 per j-std-020a terminals: solderable per mil-std-202, method 208 polarity: see diagram marking: marking code & date code, see page 2 marking code: see table below and page 2 weight: 0.008 grams (approx.) ordering information: see page 2 esd rating exceeding 16kv per the human body model (note 4) mechanical data a e j l top view m b c h g d k t c u d o r p w e n @t a = 25c unless otherwise specified electrical characteristics type number marking code v rwm i r @ v rwm breakdown voltage v c @i pp (note 2) typical temperature coefficient v br (note 3) (v) @ i t v c i pp volts a min nom max ma v a tc (mv/ c) mmbz5v6al k9a 3 5.0 5.32 5.6 5.88 20 8.0 3.0 1.8 24 watt (v f = 0.9v max @ i f = 10ma) note: 1. device mounted on fr-5 pcb 1.0 x 0.75 x 0.062 inch pad layout as shown on diodes inc. suggested pad layout ap02001, whi ch can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 200mw per element must not be exceeded. 2. non-repetitive current pulse per figure 2 and derate above t a = 25 c per figure 1. 3. short duration pulse test used to minimize self-heating effect. 4. mmbz5v6al and mmbz15val exceed 16kv esd rating, all other voltages exceed 8kv esd rating. type number marking code v rwm i r @ v rwm breakdown voltage v c @i pp (note 2) typical temperature coefficient v br (note 3) (v) @ i t v c i pp volts a min nom max ma v a tc (%/ c) mmbz6v8al k9c 4.5 0.5 6.46 6.8 7.14 1.0 9.6 2.5 +0.045 mmbz9v1al k9d 6.0 0.3 8.65 9.1 9.56 1.0 14 1.7 +0.065 mmbz10val k9e 6.5 0.3 9.50 10 10.5 1.0 14.2 1.7 +0.065 24 watt (v f = 1.1v max @ i f = 200ma) sot-23 dim min max a 0.37 0.51 b 1.20 1.40 c 2.30 2.50 d 0.89 1.03 e 0.45 0.60 g 1.78 2.05 h 2.80 3.00 j 0.013 0.10 k 0.903 1.10 l 0.45 0.61 m 0.085 0.180 0 8 all dimensions in mm
ds30306 rev. 6 - 2 2 of 4 mmbz5v6al - mmbz33val www.diodes.com t c u d o r p w e n 012 3 100 50 0 i , peak pulse current (%i ) ppp peak value i pp half value i /2 pp 10 x 1000 waveform as defined by r.e.a. t p t, time (ms) fi g . 2 pulse waveform 10 x 1000 waveform as defined by r.e.a. 0 25 50 75 100 125 150 175 200 100 75 50 25 0 t , ambient temperature ( c) a fi g . 1 pulse deratin g curve peak pulse derating in % of peak power or current ordering information month jan feb march apr may jun jul aug sep oct nov dec code 1234567 89 o nd year 2001 2002 2003 2004 2005 2006 2007 2008 code mnprst uv date code key xxx = product type marking code ym = date code marking y = year ex: n = 2002 m = month ex: 9 = september xxx ym marking information (note 5) device packaging shipping (type number)-7* sot-23 3000/tape & reel * example: 5.6v type = mmbz5v6al-7. notes: 5. for packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. type number marking code v rwm i r @ v rwm breakdown voltage v c @i pp (note 2) typical temperature coefficient v br (note 3) (v) @ i t v c i pp volts na min nom max ma v a tc (%/ c) mmbz15val k9k 12 50 14.25 15 15.75 1.0 21 1.9 +0.080 mmbz18val k9l 14.5 50 17.10 18 18.90 1.0 25 1.6 +0.090 MMBZ20VAL k9n 17 50 19.00 20 21.00 1.0 28 1.4 +0.090 mmbz27val k9q 22 50 25.65 27 28.35 1.0 40 1.0 +0.090 mmbz33val k9t 26 50 31.35 33 34.65 1.0 46 0.87 +0.090 40 watt (v f = 1.1v max @ i f = 200ma)
ds30306 rev. 6 - 2 3 of 4 mmbz5v6al - mmbz33val www.diodes.com 012 3 320 0 40 80 120 160 200 240 280 c, capacitance (pf) bias (v) fig. 3 typical capacitance vs. bias voltage (lower curve is bidirectional mode, upper curve is unidirectional mode ) mmbz5v6al f=1mhz 012 3 80 0 10 20 30 40 50 60 70 c, capacitance (pf) bias (v) fig. 4 typical capacitance vs. bias voltage (lower curve is bidirectional mode, upper curve is unidirectional mode ) mmbz15val mmbz27val f=1mhz 0.1 1.0 pulse width (ms) fig. 6 pulse rating curve, p (w) vs. pulse width (ms) pk power is defined as p = v x i p kc pp 0.1 10 100 1.0 10 1000 10000 t=25 c j p , peak pulse power (w) pk 100 non repetitive pulse waveform (rectangular) unidirectional bidirectional t c u d o r p w e n 0 50 100 200 150 250 300 0 25 50 75 100 125 150 175 p , power dissipation (mw) d t , ambient temperature a fi g .5 stead y state power deratin g curve fr-5 board
ds30306 rev. 6 - 2 4 of 4 mmbz5v6al - mmbz33val www.diodes.com 0.1 1.0 pulse width (ms) fig. 7 pulse rating curve, p (w) vs. pulse width (ms) pk (nom) power is defined as p = v x i pk(nom) z(nom) pp where v is the nominal zener voltage z(nom) measured at the low test current used for volta g e classification 0.1 10 100 1.0 10 1000 10000 t=25 c j p , peak pulse power (w) pk (nom) 100 non repetitive pulse waveform (rectangular) unidirectional bidirectional t c u d o r p w e n
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